The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jan. 08, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventor:
Boh-Chang Kim, Suwon-Si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5642 (2013.01); G11C 11/5621 (2013.01); G11C 11/5635 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 11/5628 (2013.01);
Abstract
A read method of a nonvolatile memory device includes determining whether a selected word line comprises LSB (least significant bit) page only programmed memory cells by applying a first read voltage to the selected word line. In the case that the selected word line comprises LSB (least significant bit) page only programmed memory cells, counting the number of off-cells by applying the first read voltage to the selected word line. And in a read operation, changing a select read voltage being applied to the selected word line according to the number of off-cells.