The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Oct. 28, 2015
Applicant:

Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;

Inventors:

Michiyo Garbe, Yokohama, JP;

Masahiro Ise, Machida, JP;

Osamu Ishibashi, Kawasaki, JP;

Yoshinori Mesaki, Yokohama, JP;

Assignee:

FUJITSU LIMITED, Kawasaki, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/12 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/12 (2013.01); G11C 29/50004 (2013.01); G11C 29/50016 (2013.01); G11C 2029/5004 (2013.01);
Abstract

A memory device comprises a memory block including a plurality of cells each including an erase state and a program state, respectively; and a control circuit configured to execute, in response to a program command, program operation of applying a pulse to each cell to charge an electric charge and transferring the cell from the erase state to the program state. The control circuit executes, in response to a diagnostic command, diagnostic operation of applying to a diagnostic target cell the pulse within a range that the diagnostic target cell in the erase state in a memory block including stored data is not shifted to the program state, and checking whether or not a charge speed of the diagnostic target cell is faster than or equal to a charge speed of a slowest-speed cell whose charge speed is the slowest among normal cells.


Find Patent Forward Citations

Loading…