The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Dec. 17, 2009
Applicants:

Kanak B. Agarwal, Austin, TX (US);

Sani R. Nassif, Austin, TX (US);

Inventors:

Kanak B. Agarwal, Austin, TX (US);

Sani R. Nassif, Austin, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 1/00 (2012.01); G03F 1/36 (2012.01);
U.S. Cl.
CPC ...
G03F 1/144 (2013.01); G03F 1/36 (2013.01);
Abstract

A method, computer program product, and data processing system for performing an improved optical proximity correction are disclosed, which better respect the electrical properties of the device being manufactured. A preferred embodiment of the present invention performs OPC by first dividing the perimeter of a mask region into a plurality of segments, then grouping the segments into at least two distinct groups, wherein segments in the first of these groups are adjusted in position so as to minimize edge placement error (EPE) when the photolithography using the mask is simulated. Segments in the second group are adjusted in position so as to minimize cumulative error in a dimension spanning the region, wherein the span of such dimension extends from segments in the first group to segments in the second group. Correction so obtained by this process more readily preserves the intended electrical behavior of the original device design.


Find Patent Forward Citations

Loading…