The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 29, 2016

Filed:

Feb. 10, 2014
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yoshimitsu Ishikawa, Tokyo, JP;

Shingo Nagano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1335 (2006.01); G02F 1/1343 (2006.01); G02F 1/1345 (2006.01);
U.S. Cl.
CPC ...
G02F 1/134309 (2013.01); G02F 1/133512 (2013.01); G02F 2001/134354 (2013.01);
Abstract

Only a first pixel electrode exists just under a first light shielding part of a black matrix, a gate insulating film and an interlayer insulating film exist on the upper layer of the first pixel electrode, and this area is an end area. Just under an opening of the black matrix, a second pixel electrode exists on the uppermost layer of a TFT substrate. The second pixel electrode is formed on the gate insulating film and the interlayer insulating film except a contact part. An area where the second pixel electrode exists on the uppermost layer of the TFT substrate is a main area. By a combination structure of the first pixel electrode and the second pixel electrode, the transmittance of the liquid crystal layer in the end area is made relatively higher than the transmittance in the main area.


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