The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 21, 2015
Method of manufacturing a photonic integrated circuit optically coupled to a laser of iii-v material
Stmicroelectronics SA, Montrouge, FR;
Stmicroelectronics (Crolles 2) Sas, Crolles, FR;
Alain Chantre, Seyssins, FR;
SĂ©bastien Cremer, Sassenage, FR;
STMICROELECTRONICS SA, Montrouge, FR;
STMICROELECTRONICS (CROLLES 2) SAS, Crolles, FR;
Abstract
A method of manufacturing an integrated circuit including photonic components on a silicon layer and a laser made of a III-V group material includes providing the silicon layer positioned on a first insulating layer that is positioned on a support. First trenches are etched through the silicon layer and stop on the first insulating layer, and the first trenches are covered with a silicon nitride layer. Second trenches are etched through a portion of the silicon layer, and the first and second trenches are filled with silicon oxide, which are planarized. The method further includes removing the support and the first insulating layer, and bonding a wafer including a III-V group heterostructure on the rear surface of the silicon layer.