The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Jul. 27, 2015
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
Mark L. Brongersma, Menlo Park, CA (US);
Dianmin Lin, Los Altos, CA (US);
Pengyu Fan, Stanford, CA (US);
Erez Hasman, Hadera, IL;
The Board of Trustees of the Leland Stanford Junior University, Palo Alto, CA (US);
TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LIMITED, Haifa, IL;
Abstract
A dielectric gradient metasurface optical device provides optical wavefront shaping using an ultrathin (less than 100 nm thick) layer of nanoscale geometric Pancharatnam-Berry phase optical elements deposited on a substrate layer. The optical elements are nanobeams composed of high refractive index dielectric material. The nanobeams have uniform size and shape and are arranged with less than 200 nm separations and spatially varying orientations in the plane of the device such that the optical device has a spatially varying optical phase response capable of optical wavefront shaping. The high refractive index dielectric material may be materials compatible with semiconductor electronic fabrication, including silicon, polysilicon, germanium, gallium arsenide, titanium dioxide, or iron oxide.