The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2016
Filed:
Mar. 07, 2012
Ik Hyun OH, Gwangju, KR;
Hyun Kuk Park, Iksan-si, KR;
Seung Min Lee, Gunsan-si, KR;
Jun MO Yang, Daejeon, KR;
Ik Hyun Oh, Gwangju, KR;
Hyun Kuk Park, Iksan-si, KR;
Seung Min Lee, Gunsan-si, KR;
Jun Mo Yang, Daejeon, KR;
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY, Cheonan-Si, KR;
Abstract
A method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell is provided to minimize thermal activating reaction by employing an electric discharge plasma sintering process. The method for manufacturing a molybdenum sputtering target for a back electrode of a CIGS solar cell comprises the steps of: charging molybdenum powder in a mold of graphite material, mounting the mold in a chamber of an electric discharge sintering apparatus, making a vacuum in the chamber, forming the molybdenum powder to the final target temperature while maintaining constant pressure on the molybdenum powder, heating the molybdenum powder in a predetermined heating pattern when reaching the final target temperature, maintaining the final target temperature for 1 to 10 minutes, and cooling the inside of the chamber while maintaining a constant pressure.