The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Dec. 11, 2014
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventors:

Takayuki Yonemura, Suwa, JP;

Yasuaki Hamada, Chino, JP;

Yoshihiko Yokoyama, Chino, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/243 (2006.01); H04N 5/378 (2011.01); H04N 5/374 (2011.01); H04N 5/235 (2006.01); H04N 5/355 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/243 (2013.01); H01L 27/1461 (2013.01); H01L 27/14643 (2013.01); H04N 5/2351 (2013.01); H04N 5/2355 (2013.01); H04N 5/355 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01);
Abstract

A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.


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