The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Sep. 30, 2015
The Research Foundation for the State University of New York, Amherst, NY (US);
The Board of Regents of the University of Texas System, Austin, TX (US);
Jonathan Paul Bird, Buffalo, NY (US);
Andrew Marshall, Dallas, TX (US);
The Research Foundation for the State University of New York, Amherst, NY (US);
Board of Regents, the University of Texas System, Austin, TX (US);
Abstract
A magneto-electric (ME) magnetic tunnel junction (MTJ) Exclusive-OR (XOR) gate is provided. The ME MTJ XOR gate includes an insulator separating a top ferromagnetic (FM) layer and a bottom FM layer, a top ME layer on the top FM layer, and a bottom ME layer on the bottom FM layer. The ME MTJ XOR gate also includes a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer where a voltage between the top electrode and the top FM layer is a first input, a voltage between the bottom electrode and the bottom FM layer is a second input, and a resistance between the top FM layer and the bottom FM layer is indicative of the XOR of the first input and the second input. The ME MTJ XOR has reduced energy consumption, smaller area, faster switching times, and is non-volatile.