The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Oct. 07, 2014
Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Akihiro Nakahara, Kanagawa, JP;

Sakae Nakajima, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H03K 3/00 (2006.01); H03K 17/16 (2006.01); H01L 27/088 (2006.01); H03K 17/082 (2006.01); H03K 17/081 (2006.01); H01L 27/07 (2006.01); H03K 17/04 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01); H01L 27/0716 (2013.01); H01L 27/088 (2013.01); H03K 17/04 (2013.01); H03K 17/081 (2013.01); H03K 17/0822 (2013.01); H01L 29/7813 (2013.01); H01L 29/7835 (2013.01);
Abstract

A power semiconductor device includes an output transistor, a control circuit connected with a gate of the output transistor, a first discharge route from a first node to a ground terminal, and a second discharge route from the first node to the ground terminal. In a usual turn-off, only the first discharge route is used. When a load abnormality occurs, both of the first and second discharge routes are used. The second discharge route contains a discharge transistor and a countercurrent prevention device. The discharge transistor is connected between the first node and the second node. The countercurrent prevention device prevents a flow of current from the third node to the second node. At least, in an OFF period, the control circuit sets the gate voltage of the discharge transistor to a high level.


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