The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Dec. 22, 2011
Junya Nishii, Inazawa, JP;
Tetsuya Kishino, Nara, JP;
Hiroyuki Tanaka, Kyoto, JP;
Kyohei Kobayashi, Otsu, JP;
Kenji Yamamoto, Kizugawa, JP;
Masahisa Shimozono, Higashiosaka, JP;
Takanori Ikuta, Kyoto, JP;
Michiaki Nishimura, Kirishima, JP;
Junya Nishii, Inazawa, JP;
Tetsuya Kishino, Nara, JP;
Hiroyuki Tanaka, Kyoto, JP;
Kyohei Kobayashi, Otsu, JP;
Kenji Yamamoto, Kizugawa, JP;
Masahisa Shimozono, Higashiosaka, JP;
Takanori Ikuta, Kyoto, JP;
Michiaki Nishimura, Kirishima, JP;
KYOCERA CORPORATION, Kyoto-shi, Kyoto, JP;
Abstract
A SAW element has a substrate; an IDT electrode located on an upper surface of the substrate and comprises Al or an alloy containing Al; a first film located on an upper surface of the IDT electrode; and a protective layer which covers the IDT electrode provided with the first film and the portion of the substrate exposed from the IDT electrode, which has a thickness from the upper surface of the substrate larger than a total thickness of the IDT electrode and first film, and which contains a silicon oxide. The first film contains a material which has a larger acoustic impedance than the material (Al or the alloy containing Al) of the IDT electrode and the silicon oxide and which has a slower propagation velocity of an acoustic wave than the material of the IDT electrode and the silicon oxide.