The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
May. 22, 2013
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
Wen-yi Chen, Chandler, AZ (US);
Michael H. Kaneshiro, Chandler, AZ (US);
Rouying Zhan, Gilbert, AZ (US);
Chai Ean Gill, Chandler, AZ (US);
Wen-Yi Chen, Chandler, AZ (US);
Michael H. Kaneshiro, Chandler, AZ (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
Protection device structures and related fabrication methods are provided. An exemplary semiconductor protection device includes a first base region of semiconductor material having a first conductivity type, a second base region of semiconductor material having the first conductivity type and a dopant concentration that is less than the first base region, a third base region of semiconductor material having the first conductivity type and a dopant concentration that is greater than the second base region, an emitter region of semiconductor material having a second conductivity type opposite the first conductivity type within the first base region, and a collector region of semiconductor material having the second conductivity type. At least a portion of the second base region resides between the third base region and the first base region and at least a portion of the first base region resides between the emitter region and the collector region.