The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Aug. 16, 2007
Jean-philippe Bourgoin, Voisin le Bretonneux, FR;
Marcelo Goffman, Palaiseau, FR;
Vincent Derycke, Montigny le Bretonneux, FR;
Nicolas Chimot, Brunehamel, FR;
Jean-Philippe Bourgoin, Voisin le Bretonneux, FR;
Marcelo Goffman, Palaiseau, FR;
Vincent Derycke, Montigny le Bretonneux, FR;
Nicolas Chimot, Brunehamel, FR;
COMMISSARIAT A L'ENERGIE ATOMIQUE, Paris, FR;
Abstract
A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer.