The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Oct. 18, 2013
Nederlandse Organisatie Voor Toegepast-natuurwetenschappelijk Onderzoek Tno, 's-Gravenhage, NL;
Carolus Ida Maria Antonius Spee, 's-Gravenhage, NL;
Paulus Wilhelmus Maria Blom, 's-Gravenhage, NL;
Jack W. Levell, 's-Gravenhage, NL;
Nederlandse Organisatie voor toegepast-natuurwetenschappelijk onderzoek TNO, 's-Gravenhage, NL;
Abstract
The present invention is directed to a method of manufacturing a multilayer semiconductor element. According to this method a first device layer is provided on a carrier by solution printing of a first material on the carrier. A second device layer is provided by solution printing of a second material solution on said first device layer; the second material solution comprising second device layer material dissolved in a solvent. Prior to solution printing of the second device layer, a barrier interlayer is added onto the first layer for being arranged in between said first and said second device layer. The barrier interlayer comprises an interlayer material insoluble to said solvent, and arranged for enabling electric interaction between the first and second device layer. The invention further provides a semiconductor element.