The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
May. 03, 2013
Osram Opto Semiconductors Gmbh, Regensburg, DE;
Joachim Hertkorn, Alteglofsheim, DE;
Thomas Lehnhardt, Regensburg, DE;
Marcus Eichfelder, Regensburg, DE;
Jan-Philipp Ahl, Regensburg, DE;
OSRAM OPTO SEMICONDUCTORS GMBH, Regensburg, DE;
Abstract
In at least one embodiment, the method is designed to produce an active zone for an optoelectronic semiconductor chip and comprises the following steps: growing a fourth barrier layer () based on AlInGaN where 0≦x4≦0.40 and on average 0<y4≦0.4, wherein the In content increases along a growth direction (z), growing a quantum well layer () on the fourth barrier layer (), wherein the quantum well layer () is based on InGaN where 0.08≦y≦0.35, growing a first barrier layer () based on AlInGaN where 0≦x1≦0.40 and on average 0<y1≦0.4 onto the quantum well layer (), wherein the In content decreases along the growth direction (z), growing a second barrier layer () based on GaN onto the first barrier layer (), and growing a third barrier layer () based on GaN onto the second barrier layer (), wherein the third barrier layer () is grown with the addition of Hgas.