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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9502606 B1

PDFFull Text
Date of Patent:
Nov. 22, 2016

Filed:

Apr. 27, 2016

Nitride semiconductor ultraviolet light-emitting element

Applicant:

Soko Kagaku Co., Ltd., Aichi, JP;

Inventors:

Cyril Pernot, Aichi, JP;

Akira Hirano, Aichi, JP;

Assignee:

SOKO KAGAKU CO., LTD., Aichi, JP;

Attorney:

Haynes Beffel & Wolfeld LLP

Primary Examiner:

Marvin Payen

Assistant Examiner:

Jeremy Joy

Int. Cl.
CPC ...
H01L 33/32 (2010.01); H01L 21/20 (2006.01); H01L 33/12 (2010.01); H01L 33/00 (2010.01); H01L 33/16 (2010.01); H01L 33/06 (2010.01); H01L 33/24 (2010.01); H01L 33/18 (2010.01); H01L 21/02 (2006.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); H01L 33/18 (2013.01); H01L 33/24 (2013.01); H01L 33/32 (2013.01); H01L 21/0254 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 33/38 (2013.01);
Abstract

A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%.

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