The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

May. 12, 2011
Applicants:

Meoung Whan Cho, Yongin, KR;

Seog Woo Lee, Suwon, KR;

Pil Guk Jang, Suwon, KR;

Ryuichi Toba, Akita, JP;

Yoshitaka Kadowaki, Akita, JP;

Inventors:

Meoung Whan Cho, Yongin, KR;

Seog Woo Lee, Suwon, KR;

Pil Guk Jang, Suwon, KR;

Ryuichi Toba, Akita, JP;

Yoshitaka Kadowaki, Akita, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/0079 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01);
Abstract

A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.


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