The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Apr. 24, 2013
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;

Inventors:

Binbin Cao, Beijing, CN;

Chengshao Yang, Beijing, CN;

Bozhu Zhou, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/32 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7869 (2013.01); G02F 1/1368 (2013.01); G02F 1/136286 (2013.01); H01L 21/02565 (2013.01); H01L 27/124 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1259 (2013.01); H01L 27/3248 (2013.01); H01L 27/3288 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/66969 (2013.01);
Abstract

An oxide thin film transistor array substrate, a manufacturing method thereof and a display panel are provided. The oxide TFT array substrate includes a base substrate and an oxide TFT, a gate line, a data line and a pixel electrode provided on the base substrate, the drain electrode of the oxide TFT being connected with the pixel electrode, wherein a connection structure is provided between the source electrode of the oxide TFT and the data line, by which the source electrode of the oxide TFT and the data line are electrically connected, and the resistivity of the connection structure is larger than the resistivity of the source electrode.


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