The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jun. 19, 2013
Applicants:

Boe Technology Group Co., Ltd., Beijing, CN;

Hefei Boe Optoelectronics Technology Co., Ltd., Hefei, Anhui, CN;

Inventors:

Qinghua Q Jiang, Beijing, CN;

Xiaohe Li, Beijing, CN;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); C23C 14/14 (2006.01); C23C 14/34 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 21/311 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 29/786 (2013.01); C23C 14/14 (2013.01); C23C 14/3492 (2013.01); C23C 14/35 (2013.01); C23C 16/345 (2013.01); C23C 16/45523 (2013.01); H01L 21/022 (2013.01); H01L 21/0217 (2013.01); H01L 21/02104 (2013.01); H01L 21/02274 (2013.01); H01L 21/31116 (2013.01); H01L 21/32051 (2013.01); H01L 21/32134 (2013.01); H01L 29/41733 (2013.01); H01L 29/42384 (2013.01); H01L 29/45 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01); H01L 2029/42388 (2013.01); Y10T 428/24992 (2015.01);
Abstract

A thin film layer and manufacturing method thereof, a substrate for display and a liquid crystal display are provided. The embodiments according to the present invention can solve the problem that the gradient at the edge of the thin film layer produced with current methods is too steep or perpendicular, thus the thin film layer deposited in the next step easily has step coverage defect or even breakage. The thin film layer of the embodiments of the present invention comprises a plurality of sub-layers with different densities, wherein, the density of an upper sub-layer is smaller than that of a lower sub-layer. The yield and reliability of the thin film transistor and the thin film transistor liquid crystal display produced with the thin film layer of the embodiments of the present invention are high.


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