The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Sep. 08, 2015
Applicant:
Coolstar Technology, Inc., Saratoga, CA (US);
Inventors:
Shuming Xu, San Mateo, CA (US);
Wenhua Dai, San Jose, CA (US);
Assignee:
Coolstar Technology, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7835 (2013.01); H01L 29/402 (2013.01);
Abstract
An LDMOSFET is designed with dual modes. At the high voltage mode, it supports a high breakdown voltage and is biased at a high voltage to get the benefits of high output power, higher output impedance and lower matching loss. At the low voltage mode, it exhibits a reduced knee voltage so that some extra voltage and power can be gained although it is biased at lower voltage. The efficiency is therefore improved as well.