The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
May. 02, 2013
Applicant:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Inventor:
Jin Woo Han, Bucheon-si, KR;
Assignee:
Magnachip Semiconductor, Ltd., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/407 (2013.01); H01L 29/41741 (2013.01); H01L 29/4238 (2013.01); H01L 29/42372 (2013.01); H01L 29/66666 (2013.01); H01L 29/66734 (2013.01); H01L 29/7811 (2013.01); H01L 29/7813 (2013.01);
Abstract
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a substrate comprising a trench; a first electrode disposed below the trench; a second electrode disposed above the trench, a first insulating layer being disposed between the first electrode and the second electrode; a first contact arranged in a first direction of the substrate and connected to the first electrode; and a second contact arranged in second direction that is different from the first direction, the second contact being connected to the second electrode.