The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Nov. 19, 2014
Applicant:
Fujitsu Limited, Kawasaki-shi, Kanagawa, JP;
Inventor:
Tsuyoshi Takahashi, Ebina, JP;
Assignee:
FUJITSU LIMITED, Kawasaki, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/36 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7391 (2013.01); H01L 29/66356 (2013.01); H01L 29/0895 (2013.01); H01L 29/205 (2013.01); H01L 29/365 (2013.01);
Abstract
In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow between a source electrode and a channel forming layer of which the central portion is a channel layer, is provided on the channel forming layer on the side in contact with the channel layer.