Mass production process of high voltage and high current schottky diode with diffused design

Abstract

A process of manufacture of high voltage (300-600V) and high current (10-100 A) Schottky diode, which includes the following steps in sequence: provide a N-type silicon wafer; process phosphor deposition and high-concentration N+ phosphorus diffusion; cutting and chemical mechanical polishing; classifying into different voltage groups; processing primary oxidation and lithography; processing boron diffusion, secondary lithography and wiring; process ion implantation and metal spluttering to form the Schottky barrier; process metal evaporation and lithography for front metal; and finally process etching and metal evaporation for rear metal. Instead of the conventional epitaxial process, a diffusion process is employed to form the N+ layer. The final product is equipped with the advantages of Schottky diode and is applicable for high voltage of 300-600V and high current of 10-100 A. The current leakage and defect rate are dramatically lowered while the cost is lowered, thus mass production is facilitated.