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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9502489 B1

PDFFull Text
Date of Patent:
Nov. 22, 2016

Filed:

Jan. 09, 2015

Method of manufacturing semiconductor device

Applicant:

Renesas Electronics Corporation, Kawasaki-shi, Kanagawa, JP;

Inventors:

Takuo Funaya, Kanagawa, JP;

Takayuki Igarashi, Kanagawa, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

Shapiro, Gabor and Rosenberger, PLLC

Primary Examiner:

Julia Slutsker

Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 49/02 (2006.01); H01L 21/66 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/78 (2006.01); H01L 23/522 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 28/10 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/78 (2013.01); H01L 22/32 (2013.01); H01L 22/34 (2013.01); H01L 23/5227 (2013.01); H01L 24/06 (2013.01); H01L 24/49 (2013.01); H01L 22/14 (2013.01); H01L 24/45 (2013.01); H01L 2224/05554 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48137 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49113 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/181 (2013.01);
Abstract

Provided is a semiconductor device having improved reliability. Over a semiconductor substrate, a first coil is formed via a first insulating film. A second insulating film is formed so as to cover the first insulating film and the first coil. Over the second insulating film, a pad is formed. Over the second insulating film, a multi-layer film having an opening exposing a part of the pad is formed. Over the multi-layer insulating film, a second coil is formed. The second coil is placed over the first coil. The second and first coils are magnetically coupled to each other. The multi-layer film includes a silicon dioxide film, a silicon nitride film over the silicon dioxide film, and a resin film over the silicon nitride film.

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