The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jan. 22, 2014
Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-Do, KR;

Inventor:

Dong-Won Lee, Yongin, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 27/12 (2006.01); H01L 51/56 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3258 (2013.01); H01L 27/1248 (2013.01); H01L 29/78636 (2013.01); H01L 27/1266 (2013.01);
Abstract

A thin-film transistor substrate may include an electrical wiring structure that includes a first electrode, which may be a source electrode, a drain electrode, or a capacitor electrode. The thin-film transistor substrate may further include a first insulating layer that directly contacts a first side of the first electrode. The thin-film transistor substrate may further include a second insulating layer that directly contacts a second side of the first electrode opposite the first side of the first electrode. The thin-film transistor substrate may further include a first filling layer that is disposed between the first insulating layer and the second insulating layer.


Find Patent Forward Citations

Loading…