The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Mar. 10, 2015
Applicant:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Inventors:
Assignee:
Kabushiki Kaisha Toshiba, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 45/00 (2006.01); H01L 21/28 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2481 (2013.01); H01L 21/28282 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/31111 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01); H01L 27/2436 (2013.01); H01L 45/1675 (2013.01);
Abstract
According to one embodiment, a semiconductor memory device includes a substrate including a major surface; a plurality of first films having conductivity or semiconductivity, the first films being provided above the substrate and extending in a first direction inclined with respect to the major surface; a plurality of second films having conductivity, the second films being provided above the substrate and extending in a second direction inclined with respect to the major surface and crossing the first direction; and a plurality of storage films provided in crossing sections of the first films and the second films.