The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9502428 B1

PDF
Full Text
Expired
Date of Patent:
Nov. 22, 2016

Filed:

Apr. 29, 2015
Applicant:

Sandisk Technologies, Inc., Plano, TX (US);

Inventor:

Yasuaki Yonemochi, Yokkaichi, JP;

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11529 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01);
Abstract

A method of forming narrow and wide lines includes forming mandrels separated by wider gaps and narrower gaps, forming sidewall spacers on sides of the gaps, and then removing the mandrels. Subsequent anisotropic etching extends through an underlying mask layer at locations between sidewall spacers that were formed in wider gaps, to thereby separate narrow line portions of the mask layer, without extending through the mask layer at locations between sidewall spacers that were formed in narrower gaps, thereby leaving wide line portions of the mask layer under the second sidewall spacers.


Find Patent Forward Citations

Yonemochi, Yasuaki. (2016). Sidewall assisted process for wide and narrow line formation (U.S. Patent No. 9502428). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9502428

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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