The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Sep. 19, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventor:

Yung-Tsun Liu, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/26 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01); H01L 21/8258 (2006.01); H01L 29/08 (2006.01); H01L 29/161 (2006.01); H01L 29/423 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 21/8258 (2013.01); H01L 29/0847 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/26 (2013.01); H01L 29/4232 (2013.01); H01L 29/6656 (2013.01); H01L 29/78 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on the sidewall of the gate stack structure, and the gate spacers include a top portion and a bottom portion adjoined to the top portion, and the bottom portion slopes to a top surface of the substrate. The semiconductor device structure further includes an epitaxial structure formed adjacent to the gate spacers, and the epitaxial structure is formed below the gate spacers.


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