The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Aug. 28, 2015
Cheolwoo Park, Hwaseong-si, KR;
Kwangyul Lee, Suwon-si, KR;
Jeongeon Lee, Suwon-si, KR;
Seokjun Won, Seoul, KR;
Hyungsuk Jung, Suwon-si, KR;
Cheolwoo Park, Hwaseong-si, KR;
Kwangyul Lee, Suwon-si, KR;
Jeongeon Lee, Suwon-si, KR;
Seokjun Won, Seoul, KR;
Hyungsuk Jung, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a semiconductor device and method of fabricating the same. The device includes a substrate including a first region and a second region, a first gate pattern on the first region, a second gate pattern on the second region, and an interlayer insulating layer enclosing the first and second gate patterns. The first gate pattern including a first gate insulating layer and a first gate electrode, the second gate pattern including a second gate insulating layer and a second gate electrode, the first gate insulating layer is thicker than the second gate insulating layer, and a top width of the second gate pattern is larger than a bottom width thereof.