The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jun. 26, 2015
Silicon Laboratories Inc., Austin, TX (US);
Jeremy C. Smith, Austin, TX (US);
Anirudh Oberoi, Austin, TX (US);
Silicon Laboratories Inc., Austin, TX (US);
Abstract
Diode string configurations are provided that employ one or more guard bars (G) positioned adjacent an end diode structure of a diode string to create a parasitic silicon-controlled rectifier (SCR) coupling between the end diode structure and the guard bar/s that operates to discharge current of an ESD event through a lateral parasitic bipolar transistor of the SCR and away from the individual diodes of the diode string. One or more of the disclosed guard bars may be positioned adjacent to a diode on a first end of a diode string to create a lateral SCR coupling for ESD discharge away from all of the diodes in the diode string without requiring positioning of a last diode on an opposite end of the same diode string adjacent the first terminal diode.