The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jul. 15, 2015
Applicant:

Canon Kabushiki Kaisha, Tokyo, JP;

Inventors:

Koichiro Tsujita, Utsunomiya, JP;

Tadashi Arai, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 21/3213 (2006.01); H01L 21/311 (2006.01); H01L 21/308 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823828 (2013.01); H01L 21/0273 (2013.01); H01L 21/3088 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 27/0207 (2013.01); H01L 29/0642 (2013.01);
Abstract

The present invention provides a pattern formation method of forming a pattern on a substrate by partially removing a line and space pattern formed on the substrate, comprising a first formation step of forming a first layer including a plurality of first openings on the line and space pattern, a second step of forming, on the first layer, a second layer including a second opening for exposing one or more first openings, which are used to partially remove the line and space pattern, among the plurality of first openings, and a removing step of partially removing the line and space pattern through the second opening and the first opening, wherein the plurality of first openings are located on a plurality of lines of the line and space pattern.


Find Patent Forward Citations

Loading…