The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Nov. 08, 2013
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Klaus Schuegraf, San Jose, CA (US);

Seshadri Ramaswami, Saratoga, CA (US);

Michael R. Rice, Pleasanton, CA (US);

Mohsen S. Salek, Saratoga, CA (US);

Claes H. Bjorkman, Los Altos, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/302 (2006.01); H01L 21/00 (2006.01); H01L 21/78 (2006.01); H01L 21/46 (2006.01); H01L 21/683 (2006.01); H01L 23/544 (2006.01); H01L 21/67 (2006.01); H01L 21/308 (2006.01); H01L 21/56 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/78 (2013.01); H01L 21/02076 (2013.01); H01L 21/302 (2013.01); H01L 21/308 (2013.01); H01L 21/561 (2013.01); H01L 21/67017 (2013.01); H01L 21/67207 (2013.01); H01L 21/6836 (2013.01); H01L 23/544 (2013.01); H01L 21/30 (2013.01); H01L 21/568 (2013.01); H01L 24/94 (2013.01); H01L 2221/68327 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/12042 (2013.01);
Abstract

A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.


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