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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9502236 B1

PDFFull Text
Date of Patent:
Nov. 22, 2016

Filed:

Mar. 18, 2015

Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing semiconductor device

Applicant:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Inventors:

Yukitomo Hirochi, Toyama, JP;

Kazuyuki Toyoda, Toyama, JP;

Kazuhiro Morimitsu, Toyama, JP;

Taketoshi Sato, Toyama, JP;

Tetsuo Yamamoto, Toyama, JP;

Assignee:

Hitachi Kokusai Electric Inc., Tokyo, JP;

Attorney:

Edell, Shapiro & Finnan, LLC

Primary Examiner:

Richard Booth

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); C23C 16/40 (2006.01); C23C 16/452 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02274 (2013.01); C23C 16/405 (2013.01); C23C 16/452 (2013.01); C23C 16/45542 (2013.01); H01J 37/321 (2013.01); H01J 37/32137 (2013.01); H01J 37/32357 (2013.01); H01J 37/32449 (2013.01); H01L 21/0228 (2013.01); H01L 21/02186 (2013.01); H01L 21/02263 (2013.01); H01L 21/67017 (2013.01);
Abstract

There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second processing gas plasmatized by a plasma unit to a processing container. The method includes: starting a supply of an electric power to plasmatize the second processing gas to the plasma unit without supplying the second processing gas to the plasma unit; and starting a supply of the second processing gas with the electric power being supplied to the plasma unit.

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