The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Nov. 27, 2013
Applicant:
Showa Denko K.k., Tokyo, JP;
Inventors:
Yuzo Sasaki, Hikone, JP;
Kenji Suzuki, Chichibu, JP;
Assignee:
SHOWA DENKO K.K., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02019 (2013.01); H01L 21/02013 (2013.01); H01L 21/02024 (2013.01); H01L 29/1608 (2013.01);
Abstract
A method of manufacturing a SiC substrate of the invention includes at least an oxide film-forming process of forming an oxide film () to cover a surface () of the SiC substrate (); and a planarization process of polishing the SiC substrate () from an oxide film side () in accordance with a CMP method so as to remove the oxide film (), and of polishing the surface () of the SiC substrate () to planarize the surface ().