The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Aug. 07, 2015
Applicant:

Sumitomo Heavy Industries Ion Technology Co., Ltd., Tokyo, JP;

Inventors:

Makoto Sano, Ehime, JP;

Mitsukuni Tsukihara, Ehime, JP;

Haruka Sasaki, Ehime, JP;

Kouji Inada, Ehime, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/00 (2006.01); H01J 37/244 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/244 (2013.01); H01J 37/3171 (2013.01); H01J 2237/057 (2013.01); H01J 2237/24405 (2013.01); H01J 2237/24535 (2013.01); H01J 2237/303 (2013.01);
Abstract

An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.


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