The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Sep. 02, 2014
Sharp Kabushiki Kaisha, Osaka-shi, Osaka, JP;
Naoki Ueda, Osaka, JP;
Sumio Katoh, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A memory cell () includes a memory transistor (A) having channel length Land channel width W, and a plurality of select transistors (B) each electrically being connected in series with the memory transistor and independently having channel length Land channel width W, wherein each of the memory transistor and the plurality of select transistors includes an active layer (A) formed from a common oxide semiconductor film, the memory transistor is a transistor which is capable of being irreversibly changed from a semiconductor state where drain current Ids depends on gate voltage Vg to a resistor state where drain current Ids does not depend on gate voltage Vg, and channel length Lis greater than channel length L