The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jun. 07, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Min-Soo Jang, Seoul, KR;

Young-hun Seo, Hwaseong-si, KR;

Chan-yong Lee, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/06 (2006.01); G11C 17/16 (2006.01); G11C 17/18 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 17/16 (2013.01); G11C 11/5692 (2013.01); G11C 17/18 (2013.01); G11C 2211/563 (2013.01); G11C 2211/5624 (2013.01);
Abstract

An antifuse memory device includes an antifuse memory cell, a reference current generation unit, and a comparison unit. The antifuse memory cell includes an antifuse. The reference current generation unit provides a reference current selected from a plurality of reference currents. The comparison unit compares an intensity of a cell current flowing through the antifuse with an intensity of the reference current and provides an output signal corresponding to a result of the comparison.


Find Patent Forward Citations

Jang, Min-Soo. (2016). Multi level antifuse memory device and method of operating the same (U.S. Patent No. 9502132). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9502132

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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