The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Apr. 20, 2015
Applicant:

Atmel Corporation, San Jose, CA (US);

Inventors:

Danut Manea, Saratoga, CA (US);

Jeff Kotowski, Nevada City, CA (US);

Scott N. Fritz, San Jose, CA (US);

Yongliang Wang, Saratoga, CA (US);

Assignee:

Atmel Corporation, San Jose, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G05F 3/30 (2006.01); G05F 3/08 (2006.01);
U.S. Cl.
CPC ...
G05F 3/08 (2013.01); G05F 3/30 (2013.01);
Abstract

In a bandgap voltage reference with low package shift, a proportional to absolute temperature (PTAT) voltage is generated using a single diode biased at two different current levels at two different times. Using the same diode for both current density measurements removes the absolute value of the base-emitter junction voltage (Vbe) and any package shift in the PTAT voltage. The bandgap voltage reference can be implemented in a single or differential circuit topology. In some implementations, the bandgap voltage reference can include circuitry for curvature correction.


Find Patent Forward Citations

Loading…