The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jan. 06, 2012
Xiaolong Chen, Beijing, CN;
Shunchong Wang, Beijing, CN;
Tonghua Peng, Beijing, CN;
Gang Wang, Beijing, CN;
Chunjun Liu, Beijing, CN;
Wenjun Wang, Beijing, CN;
Shifeng Jin, Beijing, CN;
Xiaolong Chen, Beijing, CN;
Shunchong Wang, Beijing, CN;
Tonghua Peng, Beijing, CN;
Gang Wang, Beijing, CN;
Chunjun Liu, Beijing, CN;
Wenjun Wang, Beijing, CN;
Shifeng Jin, Beijing, CN;
Institute of Physics, Chinese Academy of Sciences, Beijing, CN;
Abstract
Provided is a nonlinear optical device manufactured with 4H silicon carbide crystal. The nonlinear optical crystal may be configured to alter at least a light beam () at a frequency to generate at least a light beam () at a further frequency different from the frequency. The nonlinear optical crystal comprises a 4H silicon carbide crystal (). The nonlinear optical device is more compatible with practical applications in terms of outputting mid-infrared laser at high power and high quality and thus are more applicable in practice, because the 4H silicon carbide crystal has a relatively high laser induced damage threshold, a relatively broad transmissive band (0.38-5.9 μm and 6.6-7.08 μm), a relatively great 2-order nonlinear optical coefficient (d=6.7 pm/V), a relatively great birefringence, a high thermal conductivity (490 WmK), and a high chemical stability.