The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Jul. 03, 2012
Applicant:
Ho-chan Ham, Gwangmyeong-si, KR;
Inventor:
Ho-Chan Ham, Gwangmyeong-si, KR;
Assignee:
LG Siltron Inc., Gyeongsangbuk-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 33/04 (2006.01); G01R 31/12 (2006.01); C30B 29/06 (2006.01); H01L 21/66 (2006.01); G01R 31/26 (2014.01);
U.S. Cl.
CPC ...
G01R 31/1218 (2013.01); C30B 29/06 (2013.01); C30B 33/04 (2013.01); G01R 31/2648 (2013.01); H01L 22/12 (2013.01); H01L 22/14 (2013.01);
Abstract
Provided is a method for evaluating defects in a wafer. The method for evaluating the wafer defects includes preparing a wafer sample, forming an oxidation layer on the wafer sample, measuring a diffusion distance of a minority carrier using a surface photovoltage (SPV), and determining results of a contamination degree.