The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Feb. 18, 2015
Applicant:

Rayton Solar Inc., Stevenson Ranch, CA (US);

Inventors:

Andrew X. Yakub, Stevenson Ranch, CA (US);

James Benjamin Rosenzweig, Los Angeles, CA (US);

Mark Stanley Goorsky, Valencia, CA (US);

Assignee:

Rayton Solar Inc., Santa Monica, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C30B 13/24 (2006.01); C30B 33/06 (2006.01); C30B 29/06 (2006.01); C30B 29/64 (2006.01); B28D 5/00 (2006.01);
U.S. Cl.
CPC ...
C30B 13/24 (2013.01); B28D 5/00 (2013.01); C30B 29/06 (2013.01); C30B 29/64 (2013.01); C30B 33/06 (2013.01); Y10T 117/1088 (2015.01);
Abstract

The process for manufacturing a silicon wafer includes steps for mounting a float zone silicon work piece for exfoliation, energizing a microwave device for generating an energized beam sufficient for penetrating an outer surface layer of the float zone silicon work piece, exfoliating the outer surface layer of the float zone silicon work piece with the energized beam, and removing the exfoliated outer surface layer from the float zone silicon work piece as the silicon wafer having a thickness less than 100 micrometers.


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