The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Feb. 11, 2015
Applicant:

AZ Electronic Materials (Luxembourg) S.a.r.l., Somerville, NJ (US);

Inventors:

Huirong Yao, Plainsboro, NJ (US);

Elizabeth Wolfer, Bethlehem, PA (US);

Salem K. Mullen, Florham Park, NJ (US);

Alberto D. Dioses, Doylestown, PA (US);

JoonYeon Cho, Bridgewater, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01); C09D 5/00 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
C09D 5/006 (2013.01); G03F 7/11 (2013.01); H01L 21/02142 (2013.01); H01L 21/02172 (2013.01); H01L 21/02175 (2013.01); H01L 21/02282 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01);
Abstract

The present invention relates to a novel composition with improved stability containing soluble, multi-ligand-substituted metal compound, a polyol compound and a solvent useful for filling material on photoresist patterns with good trench or via filling properties of microlithographic features, where the filled patterns having good plasma etch resistance in oxygen based plasmas and are used as a hard mask in forming fine patterns on semiconductor substrates by pattern transfer of this hard mask. The present invention further relates to using the novel composition in methods for manufacturing electronic devices.


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