The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Jul. 10, 2013
Applicant:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, Ibaraki, JP;

Inventors:

Yusuke Takagi, Hitachinaka, JP;

Akira Matsushita, Hitachinaka, JP;

Hideto Yoshinari, Hitachinaka, JP;

Nobutake Tsuyuno, Tokyo, JP;

Assignee:

Hitachi Automotive Systems, Ltd., Hitachinaka-shi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 5/06 (2006.01); H05K 7/20 (2006.01); H01L 23/42 (2006.01); H01L 23/051 (2006.01); H01L 23/24 (2006.01); H02M 7/00 (2006.01); H01L 25/07 (2006.01); H01L 25/18 (2006.01); H01L 23/433 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H05K 5/062 (2013.01); H01L 23/051 (2013.01); H01L 23/24 (2013.01); H01L 23/42 (2013.01); H01L 25/07 (2013.01); H01L 25/18 (2013.01); H02M 7/003 (2013.01); H05K 7/20409 (2013.01); H01L 23/3135 (2013.01); H01L 23/3142 (2013.01); H01L 23/4334 (2013.01); H01L 23/49562 (2013.01); H01L 24/73 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/181 (2013.01); H05K 7/20418 (2013.01);
Abstract

Sealing force between a metal case and a power semiconductor module is improved. In a power semiconductor module, peripheral side surfaces of power semiconductor devicesU andL and conductor platestoare integrated by being covered with a first sealing resin. An oxide layer (rough surface layer)is formed on an inner surface of a metal case. A fluid resin material is injected into a space S between the oxide layerprovided to the metal caseand a power semiconductor module, and then a second sealing resinis formed. The second sealing resinfills dents of the oxide layer, and therefore sealing force improves.


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