The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Nov. 25, 2015
Compuware Technology Inc., New Taipei, TW;
Marcos-Agoo Liquicia, New Taipei, TW;
Chien-Ta Liang, New Taipei, TW;
COMPUWARE TECHNOLOGY INC., New Taipei, TW;
Abstract
An active isolation switch according to this invention includes a field effect transistor (FET), a first bi-polar transistor and a second bi-polar transistor, and an emitter bias resistor. The FET is formed with a source, a gate, and a drain. The first bi-polar transistor is formed with a first emitter, a first base, and a first collector; the first emitter is connected to the source and the first collector is connected to the gate. The second bi-polar transistor is formed with a second emitter, a second base, and a second collector, the second base is connected to the first base, and the second collector is connected to the drain. The emitter bias resistor is formed with a first terminal and a second terminal; the first terminal is connected to the emitter of the second bi-polar transistor and the second terminal is connected to the emitter of the first bi-polar transistor. The first resistor is connected between a bias voltage and the first collector; the second resistor is connected between the bias voltage and the base of the second bi-polar transistor.