The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jul. 14, 2014
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Inventor:
Shuangching Chen, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02M 7/5387 (2007.01); H02M 7/483 (2007.01); H02M 7/487 (2007.01); H02M 3/155 (2006.01);
U.S. Cl.
CPC ...
H02M 7/483 (2013.01); H02M 7/487 (2013.01); H02M 7/5387 (2013.01); H02M 2003/1555 (2013.01);
Abstract
An increase in leakage current when a reverse voltage is applied to reverse-blocking insulated gate bipolar transistors is suppressed, thus reducing a loss resulting from the leakage current. A power conversion device includes a bidirectional switch formed by connecting two reverse-blocking insulated gate bipolar transistors having reverse breakdown voltage characteristics in reverse parallel. A control circuit is configured so as to output command signals for bringing the gates of the reverse-blocking insulated gate bipolar transistors, to which a reverse voltage is applied, into an on state.