The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Mar. 01, 2016
Applicant:
Nichia Corporation, Anan-shi, Tokushima, JP;
Inventors:
Hiroki Sakata, Tokushima, JP;
Hiroaki Yuto, Awa, JP;
Eiichiro Okahisa, Tokushima, JP;
Kazuma Kozuru, Anan, JP;
Assignee:
NICHIA CORPORATION, Anan-Shi, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01S 5/024 (2006.01); H01S 5/022 (2006.01); H01S 5/323 (2006.01);
U.S. Cl.
CPC ...
H01S 5/02469 (2013.01); H01S 5/02256 (2013.01); H01S 5/02276 (2013.01); H01S 5/02476 (2013.01); H01L 2224/48091 (2013.01); H01L 2924/12044 (2013.01); H01S 5/02212 (2013.01); H01S 5/02236 (2013.01); H01S 5/32341 (2013.01);
Abstract
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.