The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Dec. 04, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Sang-hun Jeon, Seoul, KR;

Jong-jin Park, Hwaseong-si, KR;

Ji-hyun Bae, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/145 (2013.01); H01L 27/2409 (2013.01); H01L 45/04 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/149 (2013.01); H01L 45/16 (2013.01);
Abstract

Provided is a memory device formed on a fiber. The memory device includes a lower electrode, a memory resistance layer, and an upper electrode, which are sequentially formed on a surface of the fiber. The memory resistance layer may have variable resistance properties. The memory device may further include an intermediate electrode and a switching layer formed between the memory resistance layer and the upper electrode.


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