The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496490 B1

Date of Patent:

Nov. 15, 2016

Filed:

Dec. 02, 2005

Non-volatile memory

Applicants:

Hans Boeve, Hechtel-Eksel, BE;

Karen Attenborough, Hechtel-Eksel, BE;

Inventors:

Hans Boeve, Hechtel-Eksel, BE;

Karen Attenborough, Hechtel-Eksel, BE;

Assignee:

NXP B.V., Eindhoven, NL;

Attorney:

Primary Examiner:

Yu Chen

Int. Cl.

CPC ...

H01L 45/00 (2006.01); H01L 27/24 (2006.01);

U.S. Cl.

CPC ...

H01L 45/06 (2013.01); H01L 27/2472 (2013.01); H01L 45/12 (2013.01); H01L 45/1233 (2013.01); H01L 45/1246 (2013.01); H01L 45/144 (2013.01); H01L 45/16 (2013.01);

Abstract

A non-volatile memory () is disclosed. A second electrode () is provided. A first electrode () is also provided. A recording layer having a plurality of phase change cells () variable in resistance is provided between the first electrode () and the second electrode (). A non-uniform tunnel barrier () is provided adjacent each of the recording layer and the first electrode. In use, the first electrode is in electrical communication with the non-uniform tunnel barrier, the first electrode for electrically communicating with the second electrode via the non-uniform tunnel barrier.

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