The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Dec. 18, 2013
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Britta Göötz, Regensburg, DE;

Wolfgang Mönch, Pentling, DE;

Martin Straβburg, Donaustauf, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/08 (2010.01); H01L 33/50 (2010.01); H01L 33/32 (2010.01); H01L 33/56 (2010.01); H01L 27/15 (2006.01); C09K 11/06 (2006.01); H01L 33/18 (2010.01); C08G 61/02 (2006.01);
U.S. Cl.
CPC ...
H01L 33/502 (2013.01); C09K 11/06 (2013.01); H01L 27/15 (2013.01); H01L 33/18 (2013.01); H01L 33/32 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 33/56 (2013.01); C08G 61/02 (2013.01); C08G 2261/3142 (2013.01); C08G 2261/3422 (2013.01); C08G 2261/5222 (2013.01); C08G 2261/95 (2013.01); C09K 2211/1416 (2013.01); H01L 33/08 (2013.01);
Abstract

An optoelectronic semiconductor chip includes a number of active elements arranged at a distance from one another. A carrier is arranged transversely of the active elements. The active elements each have a main axis that extends perpendicularly to the carrier and are oriented parallel to one another. A converter material surrounds the active elements on circumferential faces. The converter material includes a conversion substance or a conversion substance and a matrix material. The active elements each have a central core region that is enclosed by at least two layers such that an active layer encloses the core region and a cover layer encloses the active layer. The core region is formed with a first semiconductor material. The active layer includes a light-emitting material. The cover layer is formed with a second semiconductor material and can have a layer thickness between 0.1 nm and 100 n.


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