The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Oct. 10, 2013
Toyoda Gosei Co., Ltd., Aich-ken, JP;
Katsuki Kusunoki, Ichihara, JP;
Hisao Sato, Ichihara, JP;
TOYODA GOSEI CO., LTD., Aichi, JP;
Abstract
A semiconductor light emitting element includes: an n-type cladding layer containing n-type impurities (Si); a light emitting layer laminated on the n-type cladding layer; and a semiconductor layer containing a p-type cladding layer containing p-type impurities (Mg) and laminated on the light emitting layer. The light emitting layer has a multiple quantum well structure including first to fifth barrier layers and first to fourth well layers, and one well layer is sandwiched by two barrier layers. The thickness of the p-type cladding layeris set at less than 3-times the thickness of each of the first to fourth well layer.